Open AccessOrganic Phototransistors With All-Polymer Bulk Heterojunction Layers of p -Type and n -Type Sulfur-Containing Conjugated Polymers
Author(s) -
Hyemi Han,
Sungho Nam,
Jooyeok Seo,
Jaehoon Jeong,
Hwajeong Kim,
Donal D. C. Bradley,
Youngkyoo Kim
Publication year - 2015
Publication title -
ieee journal of selected topics in quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.131
H-Index - 159
eISSN - 1558-4542
pISSN - 1077-260X
DOI - 10.1109/jstqe.2015.2447538
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
All-polymer phototransistors were fabricated using both glass and flexible plastic film substrates by employing bulk heterojunction channel layers of p-type polymer (P3HT) and n-type polymer (THBT-ht). The devices could detect the entire visible light because the n-type polymer could sense photons in the deep red parts (>650 nm). The responsivity of devices was higher at the lower light intensity, while it could be controlled by varying the gate and/or drain voltages. Similar performances were measured for flexible all-polymer phototransistors with a bottom-source/drain and top-gate electrode configuration.