Open AccessBroadband Electroabsorption Modulators Design Based on Epsilon-Near-Zero Indium Tin Oxide
Author(s) -
Hongwei Zhao,
Yu Wang,
Antonio Capretti,
Luca Dal Negro,
Jonathan Klamkin
Publication year - 2014
Publication title -
ieee journal of selected topics in quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.131
H-Index - 159
eISSN - 1558-4542
pISSN - 1077-260X
DOI - 10.1109/jstqe.2014.2375153
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
In this paper, we propose a compact silicon (Si) electroabsorption modulator based on a slot waveguide with epsilon-near-zero indium tin oxide materials. In order to integrate the device with low-loss Si strip waveguides, both butt-coupling and evanescent-coupling schemes are investigated. For both cases, our electroabsorption modulator demonstrates a high extinction ratio and a low insertion loss over a wide optical bandwidth.