Capacitively-Coupled CMOS VCSEL Driver Circuits
Author(s) -
Victor Kozlov,
Anthony Chan Carusone
Publication year - 2016
Publication title -
ieee journal of solid-state circuits
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.571
H-Index - 215
eISSN - 1558-173X
pISSN - 0018-9200
DOI - 10.1109/jssc.2016.2584641
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas , computing and processing
A capacitively-coupled laser diode driver (LDD) for common-cathode vertical-cavity surface-emitting lasers (VCSELs) designed in 65 nm CMOS intended for short-reach parallel optical interconnects is presented. The LDD consists of a capacitively-coupled voltage-mode high-frequency path and a direct-coupled path that provides low-frequency signal components. By increasing the low-frequency path bandwidth an order of magnitude compared to previous capacitively-coupled drivers, the on-chip coupling capacitor is reduced to 1.05 pF, occupying 3 times less area than prior art. The driver incorporates capacitively-coupled two-tap pre-emphasis to equalize the VCSEL's optical response. The VCSEL was modulated with an optical modulation amplitude (OMA) of up to +5.1 dBm and an extinction ratio of 9 dB at 15 Gb/s, the highest extinction ratio achieved in high-speed anode-driving CMOS LDDs. The driver is programmable and is also demonstrated with +2.3 dBm OMA at a power consumption of only 30 mW, corresponding to an energy efficiency of 2 pJ/bit.
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