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An 8-b 400-MS/s 2-b-Per-Cycle SAR ADC With Resistive DAC
Author(s) -
Hegong Wei,
Chi-Hang Chan,
U-Fat Chio,
Sai-Weng Sin,
Seng-Pan U,
Rui Paulo Martins,
Franco Maloberti
Publication year - 2012
Publication title -
ieee journal of solid-state circuits
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.571
H-Index - 215
eISSN - 1558-173X
pISSN - 0018-9200
DOI - 10.1109/jssc.2012.2214181
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas , computing and processing
An 8-b 400-MS/s 2-b-per-cycle (2 b/C) successive approximation register (SAR) analog-to-digital converter (ADC) is fabricated in 65-nm CMOS. With the implementation of a low-power and small-area resistive DAC and associated highly integrated circuit implementation, the proposed SAR ADC achieves rapid conversion rate, low power, and compact area, leading to SNDR of 44.5 dB and SFDR of 54.0 dB, at 400 MS/s with 1.9-MHz input. The measured FOM is 73 fJ/conversion-step at 400 MS/s from 1.2-V supply and 42 fJ/conversion-step at 250 MS/s from a 1-V supply. The active area with the digital calibration is 0.028 mm2.

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