z-logo
open-access-imgOpen Access
The Importance of p-Doping for Quantum Dot Laser on Silicon Performance
Author(s) -
Justin Norman,
Zeyu Zhang,
Daehwan Jung,
Chen Shang,
M. John Kennedy,
Mario Dumont,
Robert W. Herrick,
A. C. Gossard,
John E. Bowers
Publication year - 2019
Publication title -
ieee journal of quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.661
H-Index - 127
eISSN - 1558-1713
pISSN - 0018-9197
DOI - 10.1109/jqe.2019.2941579
Subject(s) - quantum dot laser , doping , quantum dot , optoelectronics , materials science , laser , silicon , modulation (music) , substrate (aquarium) , quantum well , reliability (semiconductor) , semiconductor laser theory , optics , physics , semiconductor , quantum mechanics , power (physics) , acoustics , geology , oceanography

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here