Open AccessPhysical Origin of the Optical Degradation of InAs Quantum Dot Lasers
Author(s) -
Matteo Buffolo,
Fabio Samparisi,
Carlo De Santi,
Daehwan Jung,
Justin Norman,
John E. Bowers,
Robert W. Herrick,
G. Meneghesso,
Enrico Zai,
Matteo Meneghini
Publication year - 2019
Publication title -
ieee journal of quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.661
H-Index - 127
eISSN - 1558-1713
pISSN - 0018-9197
DOI - 10.1109/jqe.2019.2909963
Subject(s) - quantum dot laser , optoelectronics , quantum dot , materials science , laser , electroluminescence , degradation (telecommunications) , excited state , semiconductor laser theory , silicon , photonics , equivalent series resistance , quantum well , stress (linguistics) , voltage , semiconductor , optics , nanotechnology , atomic physics , physics , electronic engineering , linguistics , philosophy , engineering , layer (electronics) , quantum mechanics