Silicon-on-Insulator Substrates as a Micromachining Platform for Advanced Terahertz Circuits
Author(s) -
N. Scott Barker,
Matthew Bauwens,
Arthur Lichtenberger,
Robert Weikle
Publication year - 2017
Publication title -
proceedings of the ieee
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.383
H-Index - 287
eISSN - 1558-2256
pISSN - 0018-9219
DOI - 10.1109/jproc.2016.2612191
Subject(s) - general topics for engineers , engineering profession , aerospace , bioengineering , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , fields, waves and electromagnetics , geoscience , nuclear engineering , robotics and control systems , signal processing and analysis , transportation , power, energy and industry applications , communication, networking and broadcast technologies , photonics and electrooptics
This paper presents a comprehensive overview of the development and utilization of a micromachined silicon-on-insulator (SOI) fabrication process that has enabled the development of terahertz (THz) frequency superconducting-insulator-superconducting (SIS) and hot-electron bolometer (HEB) mixers, broadband directional couplers, on-wafer probes, as well as several multipliers. Through the detailed presentation of these circuits, it is demonstrated that ultrathin silicon is able to provide the required characteristics to enable the heterogeneous integration of multiple device technologies that is likely to be required for future THz system-on-chip (T-SoC) development.
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