Open AccessEnhancing the Performance of Blue Quantum-Dot Light-Emitting Diodes Based on Mg-Doped ZnO as an Electron Transport Layer
Author(s) -
Min-Ming Yan,
Yi Li,
Yong-Tian Zhou,
Li Liu,
Yong Zhang,
Bao-Gui You,
Yang Li
Publication year - 2017
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2017.2666423
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Highly efficient blue quantum-dot light-emitting diodes (QD-LEDs) have been fabricated by substituting Mg-doped ZnO (MgxZn1-xO) for ZnO as an electron transporting layer (ETL). The device performance can be enhanced by optimizing Mg-doped ratios for the device structure of ITO/PEDOT:PSS/PVK/QDs/MgxZn1-xO/Al. The maximum luminescence efficiency and maximum brightness of blue QD-LEDs increase from 1.1 cd/A and 1500 cd/m2 for ZnO to 2.3 cd/A and 2500 cd/m2 for 10% Mg-doped ZnO (Mg0.10Zn0.90O), respectively. The improved device performance should be attributed to balance electron and hole injection due to Mg-doped ZnO increasing the band gap and reduce exciton loss at the interface between the ETL and the emissive layer.