Open AccessAlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
Author(s) -
Jianjun Chang,
Dunjun Chen,
Junjun Xue,
Kexiu Dong,
Bin Liu,
Hai Lu,
Rong Zhang,
Youdou Zheng
Publication year - 2016
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2016.2516257
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-versus-voltage (I-V) curves, and radiative recombination rates in MQWs, were investigated. The results indicate that DUV LEDs with polarization-doped p-type layers have lower electron leakage, better hole injection efficiency, and higher lighting emission intensity over conventional DUV LEDs. The results also reveal a significant improvement on these characteristics by increasing the Al content of the last quantum barrier in polarization-doped DUV LEDs.