Open AccessGe-on-Si Plasma-Enhanced Chemical Vapor Deposition for Low-Cost Photodetectors
Author(s) -
C. G. Littlejohns,
A. Z. Khokhar,
D. J. Thomson,
Y. Hu,
L. Basset,
S. A. Reynolds,
G. Z. Mashanovich,
G. T. Reed,
F. Y. Gardes
Publication year - 2015
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2015.2456069
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures > 800°C, often for a period of several hours. Here, we present a low-temperature (400°C) low-cost plasma-enhanced chemical vapor deposition (PECVD) Ge-on-Si growth study and, subsequently, fabricate a high-speed zero-bias 12.5-Gb/s waveguide integrated photodetector with a responsivity of 0.1 A/W at a wavelength of 1550 nm. This low-energy device demonstrates the feasibility of the PECVD method for the fabrication of low-cost low-thermal-budget Ge-on-Si devices.