Open AccessHydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0–1.1 $\mu\hbox{m}$
Author(s) -
Thomas Kampfe,
Svetlen Tonchev,
Guillaume Gomard,
Christian Seassal,
Olivier Parriaux
Publication year - 2011
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2011.2175444
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Dedicated photolithographic and reactive ion etching processes applied to the plasma-enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon layers of solar cells have been developed in the objective of the low-cost manufacturing of efficient, depth-limited subwavelength gratings transforming a linearly polarized beam into a radially and azimuthally polarized beam in the 1.0-1.1-μm wavelength range.