Hydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0–1.1   $\mu\hbox{m}$   Wavelength | Zendy

Thomas Kampfe | Zendy; Svetlen Tonchev | Zendy; Guillaume Gomard | Zendy; Christian Seassal | Zendy; Olivier Parriaux | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Hydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0–1.1 $\mu\hbox{m}$ Wavelength

Author(s) -

Thomas Kampfe,

Svetlen Tonchev,

Guillaume Gomard,

Christian Seassal,

Olivier Parriaux

Publication year - 2011

Publication title -

ieee photonics journal

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.725

H-Index - 73

eISSN - 1943-0655

pISSN - 1943-0647

DOI - 10.1109/jphot.2011.2175444

Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics

Dedicated photolithographic and reactive ion etching processes applied to the plasma-enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon layers of solar cells have been developed in the objective of the low-cost manufacturing of efficient, depth-limited subwavelength gratings transforming a linearly polarized beam into a radially and azimuthally polarized beam in the 1.0–1.1- $\mu\hbox{m}$ wavelength range.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research