Open AccessFree-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- $\mu\hbox{m}$
Author(s) -
Milos Nedeljkovic,
Richard Soref,
Goran Z. Mashanovich
Publication year - 2011
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2011.2171930
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range.