Open AccessBreakthroughs in Photonics 2010
Author(s) -
S. Cova,
M. Ghioni
Publication year - 2011
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2011.2147410
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Various new developments for array detectors based on Silicon Single-Photon Avalanche Diodes (SPADs) were reported. Improved Si-SPAD technologies brought higher detection efficiency in the red wavelength range. Higher performance was attained with InGaAs/InP SPADs by employing fast circuit techniques and by monolithic resistor-detector \udintegration. New InGaAs(P)/InP SPAD array detectors provide remarkable performance in the near-infrared range (NIR). Photon detection at longer wavelengths (up to 3.5 µm) was pursued with antimonide SPADs and Superconducting Single-Photon Detectors (SSPD)