Open AccessIII-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz
Author(s) -
M. Razeghi
Publication year - 2012
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2011.2135340
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
We review Ill-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AIGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light emitting diodes); 2) Visible (InGaN-based solid state lighting, lasers, and solar cells); and 3) Near-, mid-infrared, and terahertz (AIGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in Ill-Nitride optoelectronic devices.