Open AccessEfficiency Enhancement in Organic Light-Emitting Devices With a Magnetic Doped Hole-Transport Layer
Author(s) -
Dan-Dan Zhang,
Jing Feng,
Hai Wang,
Yue-Feng Liu,
Lu Chen,
Yu Jin,
Yu-Qing Zhong,
Yu Bai,
Qi-Dai Chen,
Hong-Bo Sun
Publication year - 2010
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2010.2098435
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Magnetic field effects on tris-(8-hydroxyquinoline) aluminum-based organic light-emitting devices (OLEDs) by employing Fe3O4 as a magnetic dopant in the hole-transport layer (HTL) have been studied. The magnetic doped OLEDs exhibit efficient injection and transport of holes, and its performances are further enhanced after a magnetic field is applied. The enhancement of luminance and current efficiency of 20% and 24% has been obtained from the magnetic doped devices, while they are only 8% and 9%, respectively, for the nondoped devices under an applied magnetic field of 500 mT. Organic magnetoresistance induced by the magnetic doped HTL is the main origin of increased electroluminescence for the magnetic doped OLEDs.