Open AccessGermanium on Glass: A Novel Platform for Light-Sensing Devices
Author(s) -
L. Colace,
V. Sorianello,
G. Assanto,
D. Fulgoni,
L. Nash,
M. Palmer
Publication year - 2010
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2010.2059374
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Using layer transfer and wafer bonding followed by epitaxial regrowth, we design, realize, and characterize a novel generation of Germanium-on-Glass (GoG) near-infrared light sensors. In particular, we demonstrate GoG p-n junction photodetectors and GoG solar cells. In terms of performance, GoG junctions compare well with Germanium (Ge) structures on either Ge or Si. The photodiodes show a minimum dark current density of 50 μA/cm2 at 1 V reverse voltage and a maximum sensitivity of 280 mA/W at 1.55 μm and 5 V bias; the solar cells exhibit conversion efficiencies as high as 2.41% and fill factors of 53%, similar to structures grown on crystalline Ge substrates.