Open AccessInterband Mid-IR Semiconductor Lasers
Author(s) -
L. J. Mawst
Publication year - 2012
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2010.2043727
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Significant advances in the room-temperature (RT) continuous-wave (CW) output power of both type-l quantum-well (QW) active-layer lasers and interband cascade lasers have been reported within the 3-4-¿m wavelength region in 2009. Recent developments on the growth of highly strained QWs and low-defect-density lattice-mismatched materials also demonstrate potential for realizing high-performance mid-infrared (IR) lasers on conventional substrates such as Si, GaAs, and inP.