Open AccessHigh-Performance Red Lasers With Low Beam Divergence
Author(s) -
Bocang Qiu,
O. P. Kowalski,
Stewart McDougall,
B. Schmidt,
John H. Marsh
Publication year - 2009
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2009.2030159
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
We report the design and fabrication of high-performance 650-nm lasers using a novel wafer structure that offers substantially independent control of the vertical far field and of the optical confinement factor. By incorporating a graded V-shaped layer into the epitaxial structure, a low divergence can be realized while retaining high optical overlap with the quantum wells and, therefore, a low threshold current. Broad-area lasers (BALs) were fabricated for a range of designs, and close agreement was obtained between the modeling and the experiment.