
Extreme Value Statistics in Silicon Photonics
Author(s) -
D. Borlaug,
S. Fathpour,
B. Jalali
Publication year - 2009
Publication title -
ieee photonics journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.725
H-Index - 73
eISSN - 1943-0655
pISSN - 1943-0647
DOI - 10.1109/jphot.2009.2025517
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
L-shape probability distributions are extremely non-Gaussian functions that have been surprisingly successful in describing the occurrence of extreme events ranging from stock market crashes, natural disasters, structure of biological systems, fractals, and optical rogue waves. We show that fluctuations in stimulated Raman scattering, as well as in coherent anti-Stokes Raman scattering, in silicon can follow extreme value statistics and provide mathematical insight into the origin of this behavior.