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This paper presents a novel wafer-level thin-film encapsulation process that allows both narrow and wide trenches, which are necessary for traditional structures such as combdrives. Fully functional devices with trench widths up to 50 &#x03BC;m are fabricated by employing a vapor phase XeF<sub>2</sub> isotropic silicon etch to create large cavities and an epitaxial deposition seal to encapsulate the devices in an ultra-clean, high vacuum environment with no native oxide and humidity. In this paper, we demonstrate the robustness of the proposed fabrication process, as well as the inherent benefits of the high-temperature epitaxial encapsulation process: high quality factor, extreme stability, exceptional aging, and fatigue performance. [2017-0098].

Robust Method of Fabricating Epitaxially Encapsulated MEMS Devices with Large Gaps