Open AccessDC Modeling and Geometry Scaling of SiC Low-Voltage MOSFETs for Integrated Circuit Design
Author(s) -
Shamim Ahmed,
Arman Ur Rashid,
Md Maksudul Hossain,
Tom Vrotsos,
A. Matthew Francis,
H. Alan Mantooth
Publication year - 2019
Publication title -
ieee journal of emerging and selected topics in power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.57
H-Index - 72
eISSN - 2168-6785
pISSN - 2168-6777
DOI - 10.1109/jestpe.2019.2925955
Subject(s) - mosfet , materials science , silicon carbide , threshold voltage , optoelectronics , spice , scaling , semiconductor device modeling , subthreshold conduction , wide bandgap semiconductor , channel length modulation , voltage , electronic engineering , electrical engineering , computational physics , transistor , engineering , physics , cmos , geometry , mathematics , metallurgy
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