Open AccessEnhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges
Author(s) -
Gheorghe Brezeanu,
Gheorghe Pristavu,
Florin Draghici,
Razvan Pascu,
Francesco Della Corte,
Simone Rascuna
Publication year - 2020
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2020.3032799
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed. According to this p-diode model, the Schottky contact current is considered to flow through m parallel-connected internal diodes, each with stable, constant barrier height and specific series resistance (both main model parameters). The value of m, required to reproduce the entire electrical forward behavior of a non-uniform Schottky contact, is directly connected to a particular model parameter (peff), used to define the inhomogeneity degree. The p-diode model was tested on forward characteristics measured for both Ni and commercial Ti Schottky diodes on 4H-SiC, which exhibited varying degrees of inhomogeneity. Excellent replication of experimental curves was achieved for all investigated samples, even those with obvious irregularities, such as “humps”, explained in the model by the series resistances' influence. In the case of m = 1, the proposed model does not produce identical results with the conventional model of a homogeneous Schottky contact if peff ≠ 0. The value of this parameter indicates how much of an inhomogeneous contact's area is essentially used for current conduction.