Open AccessOrigin of High Mobility in InSnZnO MOSFETs
Author(s) -
Nobuyoshi Saito,
Tomomasa Ueda,
Tsutomu Tezuka,
Keiji Ikeda
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2883651
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
The origins of higher mobility characteristics of In-Sn-Zn-O (InSnZnO) MOSFETs than those of conventional In-Ga-Zn-O (InGaZnO) MOSFETs were investigated. Comprehensive analyses of temperature and surface carrier concentration ( ${N} _{s}$ ) dependence of mobility revealed the aspects of potential profile around mobility edge ( ${E} _{c}$ ) in InSnZnO MOSFET. Incorporated Sn atoms were found to increase the potential fluctuation around ${E} _{c}$ at low ${N} _{s}$ compared to conventional InGaZnO MOSFET, but enhance the overlapping of electron orbitals of cations with In atoms, which results in mobility improvement by band transport.