Sputter-Deposited-MoS2  ${n}$ MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration | Zendy

Kentaro Matsuura | Zendy; Jun'Ichi Shimizu | Zendy; Mayato Toyama | Zendy; Takumi Ohashi | Zendy; Iriya Muneta | Zendy; Seiya Ishihara | Zendy; Kuniyuki Kakushima | Zendy; Kazuo Tsutsui | Zendy; Atsushi Ogura | Zendy; Hitoshi Wakabayashi | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Sputter-Deposited-MoS₂

${n}$

MISFETs With Top-Gate and Al₂O₃ Passivation Under Low Thermal Budget for Large Area Integration

Author(s) -

Kentaro Matsuura,

Jun'Ichi Shimizu,

Mayato Toyama,

Takumi Ohashi,

Iriya Muneta,

Seiya Ishihara,

Kuniyuki Kakushima,

Kazuo Tsutsui,

Atsushi Ogura,

Hitoshi Wakabayashi

Publication year - 2018

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2018.2883133

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

We have fabricated large area integrated top-gate

${n}$

MISFETs with sputter-deposited-MoS₂ film having n-type operation. A sputtering method enables us to form a large-area MoS₂ thin film followed by H₂S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al₂O₃ enhance the process endurance of MoS₂ channel. Therefore, we demonstrate TiN-top-gate

${n}$

MISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS₂-channel FETs.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research