Open AccessSputter-Deposited-MoS2 ${n}$ MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration
Author(s) -
Kentaro Matsuura,
Jun'Ichi Shimizu,
Mayato Toyama,
Takumi Ohashi,
Iriya Muneta,
Seiya Ishihara,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Atsushi Ogura,
Hitoshi Wakabayashi
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2883133
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhance the process endurance of MoS2 channel. Therefore, we demonstrate TiN-top-gate ${n}$ MISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs.