Open AccessUltra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning
Author(s) -
Y. Ohsawa,
H. Yoda,
N. Shimomura,
S. Shirotori,
S. Fujita,
K. Koi,
A. Buyandalai,
S. Oikawa,
M. Shimizu,
Y. Kato,
T. Inokuchi,
H. Sugiyama,
M. Ishikawa,
K. Ikegami,
S. Takaya,
A. Kurobe
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2880752
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Our new proposal of voltage-control spintronics memory (VoCSM) in which spin-orbit torque in conjunction with the voltage-control-magnetic-anisotropy effect works as the writing principle showed small switching current of $37~\mu \text{A}$ for about 350 $K_{B}T$ switching energy. This indicates VoCSM’s writing efficiency is so high that VoCSM would be applicable for deep learning memories requiring ultra-low power consumption.