Open AccessSuppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers
Author(s) -
Daniel Connelly,
Richard Burton,
Nyles W. Cody,
Pavel Fastenko,
Marek Hytha,
Robert Stephenson,
Hideki Takeuchi,
Keith Doran Weeks,
Robert Mears
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2872689
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental results, demonstrating the retention of steeper boron profiles after oxidation. Incorporation of the oxygen insertion layers into a CMOS process increases on-current and reduces threshold variability and mismatch.