Open AccessCVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis
Author(s) -
T. Irisawa,
N. Okada,
W. Mizubayashi,
T. Mori,
W.-H. Chang,
K. Koga,
A. Ando,
K. Endo,
S. Sasaki,
T. Endo,
Y. Miyata
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2870893
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Position and growth direction control in chemical vapor deposition (CVD) of WS2 and SnS2 by using patterned Si/SiO2 substrates has been demonstrated. It was found that step edges effectively worked as crystal nuclei and lateral crystal growth from the edges with a certain level of growth directionality was observed. Gas source CVD using industrially friendly precursors (WF6, SnCl4, and H2S) has also been developed and WS2 and SnS2 synthesis with wafer-scale uniformity have been obtained.