CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis | Zendy

T. Irisawa | Zendy; N. Okada | Zendy; W. Mizubayashi | Zendy; T. Mori | Zendy; W.-H. Chang | Zendy; K. Koga | Zendy; A. Ando | Zendy; K. Endo | Zendy; S. Sasaki | Zendy; T. Endo | Zendy; Y. Miyata | Zendy

Open Access

CVD Growth Technologies of Layered MX₂ Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis

Author(s) -

T. Irisawa,

N. Okada,

W. Mizubayashi,

T. Mori,

W.-H. Chang,

K. Koga,

A. Ando,

K. Endo,

S. Sasaki,

T. Endo,

Y. Miyata

Publication year - 2018

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2018.2870893

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

Position and growth direction control in chemical vapor deposition (CVD) of WS₂ and SnS₂ by using patterned Si/SiO₂ substrates has been demonstrated. It was found that step edges effectively worked as crystal nuclei and lateral crystal growth from the edges with a certain level of growth directionality was observed. Gas source CVD using industrially friendly precursors (WF₆, SnCl₄, and H₂S) has also been developed and WS₂ and SnS₂ synthesis with wafer-scale uniformity have been obtained.

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