Open AccessDrain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
Author(s) -
Chung-I. Yang,
Ting-Chang Chang,
Po-Yung Liao,
Li-Hui Chen,
Bo-Wei Chen,
Wu-Ching Chou,
Guan-Fu Chen,
Sung-Chun Lin,
Cheng-Yen Yeh,
Cheng-Ming Tsai,
Ming-Chang Yu,
Shengdong Zhang
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2837682
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (Leff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.