Open AccessCryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration
Author(s) -
P. Galy,
J. Camirand Lemyre,
P. Lemieux,
F. Arnaud,
D. Drouin,
Michel Pioro-Ladriere
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2828465
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Silicon co-integration offers compelling scale-up opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This paper reports the characterization of an nMOS quantum-dot dedicated structure below 100 mK. The device under test is built in thin silicon film fabricated with 28 nm high-k metal gate ultra-thin body and ultra-thin buried oxide advanced CMOS technology. The MOS structure is functional with improved performances at cryogenic temperature. The results open new research avenues in CMOS co-integration for quantum computing applications within the FD-SOI platform.