Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration | Zendy

P. Galy | Zendy; J. Camirand Lemyre | Zendy; P. Lemieux | Zendy; F. Arnaud | Zendy; D. Drouin | Zendy; Michel Pioro-Ladriere | Zendy

Open Access

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

Author(s) -

P. Galy,

J. Camirand Lemyre,

P. Lemieux,

F. Arnaud,

D. Drouin,

Michel Pioro-Ladriere

Publication year - 2018

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2018.2828465

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

Silicon co-integration offers compelling scale-up opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This paper reports the characterization of an nMOS quantum-dot dedicated structure below 100 mK. The device under test is built in thin silicon film fabricated with 28 nm high-k metal gate ultra-thin body and ultra-thin buried oxide advanced CMOS technology. The MOS structure is functional with improved performances at cryogenic temperature. The results open new research avenues in CMOS co-integration for quantum computing applications within the FD-SOI platform.

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