Open AccessA SPDT RF Switch Small- and Large-Signal Characteristics on TR-HR SOI Substrates
Author(s) -
Babak Kazemi Esfeh,
Martin Rack,
Sergej Makovejev,
Frederic Allibert,
Jean-Pierre Raskin
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2805780
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
This paper evaluates the small-and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation, and nonlinear behavior. It is fabricated on three different types of high resistivity (HR) silicon-on-insulator (SOI) substrates: one standard (HRSOI) and two trap-rich (RFeSI80 and RFeSI90). Using a special test structure, the contribution of substrate and active devices is separated for both in small-and large-signal. It is shown that by using trap-rich substrate technology, a reduction of over 16 dB of 2nd harmonic is achieved compared with HR SOI substrate. In off-state, it is shown that 35 dB increase of harmonic level is due to the nonlinearity of active devices. The effect of body bias on small-and large-signal FoMs of the SPDT is investigated and discussed. It is illustrated that trap-rich HR-SOI substrates having much thinner BOX, still outperform classical HR-SOI wafer.