Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs | Zendy

Li-Chung Cheng | Zendy; Chiung-Yi Huang | Zendy; Ray-Hua Horng | Zendy

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Thickness Effect on Operational Modes of ZnGa₂O₄ MOSFETs

Author(s) -

Li-Chung Cheng,

Chiung-Yi Huang,

Ray-Hua Horng

Publication year - 2018

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2018.2803078

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

The device mechanism from depletion to enhancement mode for ZnGa₂O₄ metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the ZnGa₂O₄ thin-film would affect the operational mode of the MOSFETs. Under the low-voltage operation (V_DS = 0.5 V), the transistors exhibited a high on/off ratio from 10⁷ to 10⁴, low subthreshold swing from 150 to 330 mV/dec, high field-effect mobility from 4.2 to 0.054 cm²/V-s and threshold voltages from -17.8 to 4.1 V (using constant current = 1 nA). These electrical properties all depend on the thickness of the ZnGa₂O₄ thin-film transistors. Finally, the e-mode ZnGa₂O₄ thin-film transistor with off-state breakdown voltage over 400 V is fabricated.

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