Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs | Zendy

Rongsheng Chen | Zendy; Wei Zhou | Zendy; Sunbin Deng | Zendy; Meng Zhang | Zendy; Man Wong | Zendy; Hoi Sing Kwok | Zendy

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Passivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs

Author(s) -

Rongsheng Chen,

Wei Zhou,

Sunbin Deng,

Meng Zhang,

Man Wong,

Hoi Sing Kwok

Publication year - 2018

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2018.2796238

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si thin film. Thin film transistors fabricated on the resulting poly-Si thin film exhibit improved device characteristics. The increased field-effect mobility is attributed to the incorporation of the injected silicon interstitials in the grain boundaries of the poly-Si thin film and reduction of defect density.

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