Open AccessPassivation of Poly-Si Thin Film Employing Si Self-Implantation and Its Application to TFTs
Author(s) -
Rongsheng Chen,
Wei Zhou,
Sunbin Deng,
Meng Zhang,
Man Wong,
Hoi Sing Kwok
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2796238
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the poly-Si thin film. Thin film transistors fabricated on the resulting poly-Si thin film exhibit improved device characteristics. The increased field-effect mobility is attributed to the incorporation of the injected silicon interstitials in the grain boundaries of the poly-Si thin film and reduction of defect density.