Open AccessDesign and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS
Author(s) -
Nicola D'Ascenzo,
Werner Brockherde,
Stefan Dreiner,
Alexander Schwinger,
Andrei Schmidt,
Qingguo Xie
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2771145
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
The possibility to design a silicon photomultiplier (SiPM) using standard CMOS processes represents the frontier of current low photon flux detectors. It allows an integrated development of both sensor and intelligent read-out electronics on the same technology line and enables to create intelligent devices with on-chip signal processing. We report the design and characterization of an SiPM composed of $20\times 20$ microcells with size $50\times 50 ~\mu \text{m}^{2}$ . The device exhibits 200-kHz/mm2 dark rate, 10% cross talk probability, 1.5% afterpulsing probability, and $5.35\times 10^{6}$ intrinsic gain at 29-V operational voltage. It is obtained at a 0.35- $\mu \text{m}$ CMOS technology node, which is compatible with the development of integrated electronics. In order to verify the potential application of the device to optical and radiation detection systems, we measure its photon detection efficiency and its response to LED light and scintillation light from an LySO crystal.