Open AccessPunch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
Author(s) -
Hideki Takeuchi,
Robert J. Mears,
Robert J. Stephenson,
Marek Hytha,
Daniel Connelly,
Pavel Fastenko,
Richard Burton,
Nyles W. Cody,
Doran Weeks,
Dmitri Choutov,
Nidhi Agrawal,
Suman Datta
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2769682
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of advanced CMOS devices and its benefits to 28 nm planar CMOS and 20 nm bulk FinFET devices projected by TCAD are discussed.