Open AccessPerformance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
Author(s) -
Carlos Couso,
Javier Martin-Martinez,
Marc Porti,
Montserrat Nafria
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2768658
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (VOP) has been proposed, which provides a good trade-off between the Ion/Ioff ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.