Open AccessHysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx
Author(s) -
Jiuren Zhou,
Yue Peng,
Genquan Han,
Qinglong Li,
Yan Liu,
Jincheng Zhang,
Min Liao,
Qing-Qing Sun,
David Wei Zhang,
Yichun Zhou,
Yue Hao
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2764678
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
We experimentally demonstrate that hysteresis of negative capacitance (NC) Ge pFETs is reduced through modulating the ferroelectric properties in HfZrOx (HZO) by changing the post annealing temperature. As annealing temperature varies from 350 °C to 450 °C, HZO exhibits a significant increasing in the ratio of remnant polarization Pr to coercive field Ec, which results in the improvement of the magnitude of ferroelectric NC CFE, therefore contributing to the reduction of hysteresis of the ferroelectric NC Ge transistors. It is also reported that the NC Ge transistor annealed at 450 °C has a small hysteresis of 0.10 V, and achieves the improved SS and IDS compared to control device without HZO.