Open AccessA Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET
Author(s) -
Cem Alper,
Jose Luis Padilla,
Pierpaolo Palestri,
Adrian M. Ionescu
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2758018
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field-effect transistor (EHBTFET). If the device is designed to conduct only under certain conditions, e.g., when Vn-gate = VDD and Vp-gate = 0, it then shows an “XOR-like” behavior that allows the implementation of certain logic gates with a smaller number of transistors compared to conventional CMOS static logic. This simplifies the design and possibly results in faster operation due to lower node capacitances. We demonstrate the feasibility of the proposed EHBTFET logic for low supply voltage operation using mixed device/circuit simulations including quantum corrections.