Performance Projections for a Reconfigurable Tunnel NanoFET | Zendy

Stefan Blawid | Zendy; Denise L. M. de Andrade | Zendy; Sven Mothes | Zendy; Martin Claus | Zendy

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Performance Projections for a Reconfigurable Tunnel NanoFET

Author(s) -

Stefan Blawid,

Denise L. M. de Andrade,

Sven Mothes,

Martin Claus

Publication year - 2017

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2017.2756040

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance (HP) operation. In LP mode, a subthreshold swing S below 60 mV/dec is predicted for a current density per gate width up to 3 nA/μm. By changing the polarities of the program gates to HP mode the current density can be increased to more than 110 μA/μm. Thus, LP/HP reconfigurability liberates the transistor from the necessity to deliver low S up to very high current densities.

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