Open AccessPerformance Projections for a Reconfigurable Tunnel NanoFET
Author(s) -
Stefan Blawid,
Denise L. M. de Andrade,
Sven Mothes,
Martin Claus
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2756040
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance (HP) operation. In LP mode, a subthreshold swing S below 60 mV/dec is predicted for a current density per gate width up to 3 nA/μm. By changing the polarities of the program gates to HP mode the current density can be increased to more than 110 μA/μm. Thus, LP/HP reconfigurability liberates the transistor from the necessity to deliver low S up to very high current densities.