Open AccessSub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
Author(s) -
Eunah Ko,
Hyunjae Lee,
Youngin Goh,
Sanghun Jeon,
Changhwan Shin
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2731401
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the gate stack. However, in order to utilize the ferroelectric capacitor (as a breakthrough technique to overcome the Boltzmann limit of the device using thermionic emission process), the thickness of the ferroelectric layer should be scaled down to sub-10-nm for ease of integration with conventional CMOS logic devices. In this paper, we demonstrate an NC fin-shaped field-effect transistor (FinFET) with a 6-nm-thick HfZrO ferroelectric capacitor. The performance parameters of NC FinFET such as on-/off-state currents and subthreshold slope are compared with those of the conventional FinFET. Furthermore, a repetitive and reliable steep switching feature of the NC FinFET at various drain voltages is demonstrated.