Open AccessCurrent Kink and Capacitance Frequency Dispersion in Silicon PIN Photodiodes
Author(s) -
Xia Guo,
Yajie Feng,
Qiaoli Liu,
Huaqiang Wang,
Chong Li,
Zonghai Hu,
Xiaoying He
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2720754
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Silicon PIN photodiodes in the visible wavelength range have been widely applied in aerospace, defense, security, medical, and scientific instruments because of their high sensitivity and low cost. In this paper, the phenomena of the current kink and the capacitance frequency dispersion are observed. Contamination at the p-type Ohmic contact interface is proposed to explain the current kink effect and capacitance frequency dispersion, according to the temperature-dependent I-V measurement results in which trap-assisted tunneling process demonstrated.