Open AccessA Carbon Nanotube Electrode a-IGZO-TFT
Author(s) -
Kai Zhu,
Lei Wen,
Min Zhang
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2715401
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using carbon nanotubes (CNTs) as source/drain/gate electrodes have been proposed and experimentally realized. Effect of the annealing temperature on the contact properties between a-IGZO and single-walled carbon nanotube (SWNT) electrodes, as well as the electrical properties of the a-IGZO TFTs have been investigated. The contact performance between SWNT electrodes and a-IGZO active layer has been improved by increasing the annealing temperature. The resulting a-IGZO TFT with SWNT electrodes shows an effective mobility of 8 cm2/V·s and an on/off current ratio of 1.9 × 107 under a drain voltage of 10 V. This SWNT-electrode a-IGZO TFT design makes it possible for CNTs as electrodes of the metal oxide TFT.