Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT) | Zendy

Wanjun Chen | Zendy; Hong Tao | Zendy; Lunfei Lou | Zendy; Chao Liu | Zendy; Wu Cheng | Zendy; Xuefeng Tang | Zendy; Hongquan Liu | Zendy; Qi Zhou | Zendy; Xiaochuan Deng | Zendy; Zhaoji Li | Zendy; Bo Zhang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

Author(s) -

Wanjun Chen,

Hong Tao,

Lunfei Lou,

Chao Liu,

Wu Cheng,

Xuefeng Tang,

Hongquan Liu,

Qi Zhou,

Xiaochuan Deng,

Zhaoji Li,

Bo Zhang

Publication year - 2017

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2017.2701791

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achieved, resulting in a fast turn-off process. Meanwhile, a low forward voltage drop is obtained due to an enhanced conductivity modulation. The simulation results show that, compared with the conventional IGBT, the proposed EI-IGBT delivers a comparable breakdown voltage while featuring an 80% shorter turn-off time (or a 72% lower turn-off loss) or a 23% lower forward voltage drop, resulting in a reduction of total energy loss.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research