Open AccessLow Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
Author(s) -
Wanjun Chen,
Hong Tao,
Lunfei Lou,
Chao Liu,
Wu Cheng,
Xuefeng Tang,
Hongquan Liu,
Qi Zhou,
Xiaochuan Deng,
Zhaoji Li,
Bo Zhang
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2701791
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achieved, resulting in a fast turn-off process. Meanwhile, a low forward voltage drop is obtained due to an enhanced conductivity modulation. The simulation results show that, compared with the conventional IGBT, the proposed EI-IGBT delivers a comparable breakdown voltage while featuring an 80% shorter turn-off time (or a 72% lower turn-off loss) or a 23% lower forward voltage drop, resulting in a reduction of total energy loss.