Open AccessQuantum-Mechanical Analysis of Amorphous Oxide-Based Thin-Film Transistors
Author(s) -
Jaewook Jeong
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2679209
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, we analyzed the electrical characteristics of amorphous oxide-based thin-film transistors (TFTs) with extremely thin active layers using a quantum-mechanical method (density gradient method) and a technology computer-aided design simulator. We observed that the evaluation of the TFT performance using the classical method resulted in errors, especially, when the interfacial-defect density of states was high. The electrical characteristics of the TFTs are influenced differently by the bulk and interfacial states when the quantum-mechanical effect is considered. Therefore, it is essential to apply the quantum effect to analyze the electrical characteristics of amorphous oxide-based TFTs with extremely thin active layers.