Flexible In2O3 Nanowire Transistors on Paper Substrates

Flexible In₂O₃ nanowire transistors gated by microporous SiO₂-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 μF/cm² at 20 Hz) of the microporous SiO₂ solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, 1.7×10⁶, and 218.3 cm²/V·s, respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors.