Open AccessFlexible In2O3 Nanowire Transistors on Paper Substrates
Author(s) -
Huixuan Liu,
Jing Li,
Rongri Tan
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2660493
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Flexible In2O3 nanowire transistors gated by microporous SiO2-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 μF/cm2 at 20 Hz) of the microporous SiO2 solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, 1.7×106, and 218.3 cm2/V·s, respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors.