Open AccessInvestigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
Author(s) -
Jun Wu,
Lin-Qing Zhang,
Yao Yao,
Min-Zhi Lin,
Zhi-Yuan Ye,
Peng-Fei Wang
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2017.2647979
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device structure of SFG transistors. Based on the Vth-programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.