Open AccessReliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier
Author(s) -
Vita Pi-Ho Hu
Publication year - 2017
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2644724
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
This paper investigates the reliability-tolerant design for ultra-thin-body (UTB) GeOI 6T SRAM cell and sense amplifiers. For UTB GeOI 6T SRAM cells, using high threshold voltage design significantly mitigates the read and hold static noise margin degradations due to NBTI and PBTI. Due to worse PBTI degradations, as stress (aging) time increases, GeOI current and voltage latch sense amplifiers show larger degradation in word-line to sense amplifier enable (SAE) delay (TWS) and sense amplifier sensing delay (TSA) compared with the SOI counterparts. Using WL to SAE self-timed sensing scheme mitigates the BTI induced delay degradation. A new reliability-tolerant sense amplifier with speed-up design is proposed for the first time to improve the PBTI dominated sensing delay for UTB GeOI sense amplifier.