Open AccessA New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device
Author(s) -
Yi-Chuen Eng,
Luke Hu,
Tzu-Feng Chang,
Steven Hsu,
Chun Mao Chiou,
Ted Wang,
Chih-Wei Yang,
Chien-Ting Lin,
I-Chang Wang,
Ming-Chih Chen,
Andy Lai,
Pei-Wen Wang,
Chia-Jung Hsu,
Wen-Yuan Pang,
Chin-Hao Kuo,
Osbert Cheng,
Chih-Yi Wang
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2626464
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, $I_{\rm d,{\mathrm{ sat}}} $ , of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped drain (LDD) process on the performance of bulk n-FinFETs is also examined in this paper. According to our measured data, excluding LDD in bulk n-FinFETs not only reduces mask costs but it also enables slightly better short-channel control compared to the inclusion of LDD. A new figure of merit, $\Delta V_{\mathrm{ DIBLSS}} /(I_{\rm d,{\mathrm{ sat}}} /I_{\rm sd,{\mathrm{ leak}}} )$ , is introduced for monitoring short-channel performance of bulk n-FinFETs, where $\Delta V_{\mathrm{ DIBLSS}} $ accounts for the DIBL and SS, and $I_{\rm sd,{\mathrm{ leak}}} $ is the source/drain subthreshold off-state leakage current.