Open AccessInvestigation of Post Oxidation Annealing Effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs
Author(s) -
Han-Yin Liu,
Wen-Chia Ou,
Wei-Chou Hsu
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2594293
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
This paper investigates the Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400°C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al2O3/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.