Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope | Zendy

Nag Yong Choi | Zendy; Sung-Min Joe | Zendy; Byung-Gook Park | Zendy; Jong-Ho Lee | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope

Author(s) -

Nag Yong Choi,

Sung-Min Joe,

Byung-Gook Park,

Jong-Ho Lee

Publication year - 2016

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2016.2593792

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

Effect of design parameters including device geometry, doping, and bias on key performance is investigated in a diode-type NAND flash memory cell string working under positive feedback (PF) mechanism. The string has a tube-type poly-Si channel, n⁺ and p⁺ regions on both ends of the string. A device simulator used in this paper is calibrated with measured trap density and poly-Si body parameters. It is shown that on-current of the PF diode-type cell string is affected significantly by electric junction barrier (V_EJB) in the channel of the cell string. With different device dimensions, the PF diode-type cell string has almost constant, steep SS characteristic, but conventional FET-type cell string shows a large change in SS.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research