Open AccessDesign Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope
Author(s) -
Nag Yong Choi,
Sung-Min Joe,
Byung-Gook Park,
Jong-Ho Lee
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2593792
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Effect of design parameters including device geometry, doping, and bias on key performance is investigated in a diode-type NAND flash memory cell string working under positive feedback (PF) mechanism. The string has a tube-type poly-Si channel, n+ and p+ regions on both ends of the string. A device simulator used in this paper is calibrated with measured trap density and poly-Si body parameters. It is shown that on-current of the PF diode-type cell string is affected significantly by electric junction barrier (VEJB) in the channel of the cell string. With different device dimensions, the PF diode-type cell string has almost constant, steep SS characteristic, but conventional FET-type cell string shows a large change in SS.