Open AccessModeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs
Author(s) -
Mohit D. Ganeriwala,
Chandan Yadav,
Nihar R. Mohapatra,
Sourabh Khandelwal,
Chenming Hu,
Yogesh Singh Chauhan
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2586116
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrödinger–Poisson equation for FinFET with various channel thickness and effective mass.